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| TSOP11..KS1 Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TSOP1130KS1 TSOP1136KS1 TSOP1138KS1 TSOP1156KS1 f0 30 kHz 36 kHz 38 kHz 56 kHz Type f0 TSOP1133KS1 33 kHz TSOP1137KS1 36.7 kHz TSOP1140KS1 40 kHz Description The TSOP11..KS1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the operation with short burst transmission codes (e.g. RECS 80) and high data rates. 12797 Features D Photo detector and preamplifier in one package D Internal filter for PCM frequency D Improved shielding against electrical field disturbance D D D D TTL and CMOS compatibility Output active low Low power consumption High immunity against ambient light Special Features D Enhanced data rate of 2400 bit/s D Operation with short bursts possible (6 cycles/ burst) Block Diagram 2 Input Control Circuit VS 100 kW 3 OUT PIN AGC Band Pass Demodulator 1 GND 94 8136 TELEFUNKEN Semiconductors Rev. A1, 22-Jul-97 1 (7) TSOP11..KS1 Absolute Maximum Ratings Tamb = 25_C Parameter Supply Voltage Supply Current Output Voltage Output Current Junction Temperature Storage Temperature Range Operating Temperature Range Power Consumption Soldering Temperature (Pin 2) (Pin 2) (Pin 3) (Pin 3) Test Conditions Symbol VS IS VO IO Tj Tstg Tamb Ptot Tsd Value -0.3...6.0 5 -0.3...6.0 5 100 -25...+85 -25...+85 50 260 Unit V mA V mA C C C mW C (Tamb 85 C) t 5s x x Basic Characteristics Tamb = 25_C Parameter Supply Current ( pp y (Pin 2) ) Transmission Distance Output Voltage Low (Pin 3) Irradiance ( - 40 kHz) (30 ) Irradiance ( kHz) (56 ) Irradiance Directivity Test Conditions VS = 5 V, Ev = 0 VS = 5 V, Ev = 40 klx, sunlight Ev = 0, test signal see fig.8, IR diode TSIP5201, IF = 0.4 A IOSL = 0.5 mA,Ee = 0.7 mW/m2, f = fo, test signal see fig.7 Test signal see fig.7 Test signal see fig.8 Test signal see fig.7 Test signal see fig.8 Test signal see fig.7 Angle of half transmission distance Symbol ISD ISH d VOSL Ee min Ee min Ee min Ee min Ee max 1/2 0.4 0.35 0.45 0.40 30 45 Min 0.4 Typ 0.5 1 35 Max 0.8 Unit mA mA m mV mW/m2 mW/m2 mW/m2 mW/m2 W/m2 deg 250 0.6 0.5 0.7 0.6 Application Circuit 330 W *) 2 TSOP11.. TSAL62.. 3 4.7 mF *) >10 kW optional +5 V **) mC 1 12755 GND *) only necessary to suppress power supply disturbances **) tolerated supply voltage range : 4.5 V TELEFUNKEN Semiconductors Rev. A1, 22-Jul-97 TSOP11..KS1 Typical Characteristics (Tamb = 25_C unless otherwise specified) Ee min - Threshold Irradiance ( mW/m2 ) 1.0 E e min / E e - Rel. Responsitivity ( % ) 0.8 2.0 f ( E ) = f0 1.6 1.2 0.8 0.4 0.0 0.7 94 9102 0.6 0.4 0.2 0.0 0.8 0.9 1.0 1.1 1.2 1.3 f / f0 - Relative Frequency Df ( 3 dB ) = f0 / 7 f = f0 "5% 0.0 94 8147 0.4 0.8 1.2 1.6 2.0 E - Field Strength of Disturbance ( kV / m ) Figure 1. Frequency Dependence of Responsivity 0.30 tpo - Output Pulse Length (ms) 0.25 0.20 Input burst duration 0.15 0.10 0.05 0 0.1 12751 Figure 4. Sensitivity vs. Electric Field Disturbances 10 f = f0 1 kHz Ee min - Threshold Irradiance ( mW/m2 ) 10 kHz 1 l = 950 nm, optical test signal, fig.7 100 Hz 1.0 10.0 100.0 1000.0 10000.0 94 9106 0.1 0.01 0.1 1 10 100 1000 Ee - Irradiance ( mW/m2 ) DVs RMS - AC Voltage on DC Supply Voltage ( mV ) Figure 2. Pulse Length and Sensitivity in Dark Ambient 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.01 0.10 1.00 10.00 100.00 Ambient, l = 950 nm Correlation with ambient light sources ( Disturbance effect ) : 10W/m2 ( Stand.illum.A, T = 2855 K )^8.2 klx ( Daylight, T = 5900 K ) Figure 5. Sensitivity vs. Supply Voltage Disturbances 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -30 -15 0 15 30 45 60 75 90 Sensitivity in dark ambient E e min - Threshold Irradiance (mW/m2 ) ^1.4klx E e min - Threshold Irradiance (mW/m2 ) 96 12111 E - DC Irradiance (W/m2) 96 12112 Tamb - Ambient Temperature ( C ) Figure 3. Sensitivity in Bright Ambient Figure 6. Sensitivity vs. Ambient Temperature TELEFUNKEN Semiconductors Rev. A1, 22-Jul-97 3 (7) TSOP11..KS1 Ee Optical Test Signal ( IR diode TSIP 5201, IF=0.4 A, N=6 pulses, f=f0, T=10 ms ) T on ,T - Output Pulse Length (ms) off 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 t tpo2 ) 12753 Ton tpi * t * tpi VO VOH VOL td1 ) w 6/fo is recommended for optimal function 12754 T Toff Output Signal 1) 2) l = 950 nm, optical test signal, fig.8 3/f0 < td < 9/f0 tpi - 4/f0 < tpo < tpi + 7/f0 1.0 10.0 100.0 1000.0 10000.0 Ee - Irradiance (mW/m2) Figure 7. Output Function Ee Optical Test Signal 1.0 0.9 I s - Supply Current ( mA ) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Figure 10. Output Pulse Diagram Vs = 5 V 600 ms T = 60 ms 600 ms t 94 8134 VO VOH VOL Output Signal, ( see Fig.10 ) 0 -30 -15 Ton Toff t 96 12115 0 15 30 45 60 75 90 Tamb - Ambient Temperature ( C ) Figure 8. Output Function 3.0 E e min - Threshold Irradiance (mW/m2 ) 2.5 2.0 N=10 1.5 N=16 1.0 N=32 0.5 0 0 12752 Figure 11. Supply Current vs. Ambient Temperature 1.2 1.0 0.8 0.6 0.4 0.2 0 750 94 8408 N=6 pulses per burst S ( l ) rel - Relative Spectral Sensitivity 0.1 0.2 0.3 0.4 0.5 0.6 0.7 850 950 1050 1150 tp/T - Duty Cycle l - Wavelength ( nm ) Figure 9. Sensitivity vs. Duty Cycle Figure 12. Relative Spectral Sensitivity vs. Wavelength 4 (7) TELEFUNKEN Semiconductors Rev. A1, 22-Jul-97 TSOP11..KS1 0 10 20 30 0 10 20 30 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 95 11339p2 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 95 11340p2 0.6 0.4 0.2 0 0.2 0.4 drel - Relative Transmission Distance 0.6 0.4 0.2 0 0.2 0.4 drel - Relative Transmission Distance Figure 13. Vertical Directivity y Figure 14. Horizontal Directivity x TELEFUNKEN Semiconductors Rev. A1, 22-Jul-97 5 (7) TSOP11..KS1 Dimensions in mm 12824 6 (7) TELEFUNKEN Semiconductors Rev. A1, 22-Jul-97 TSOP11..KS1 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A1, 22-Jul-97 7 (7) |
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